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| SFH 2540/FA SFH 2545/FA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 2540/FA SFH 2545/FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 2540/2545) und bei 880 nm (SFH 2540 FA/2545 FA) q Kurze Schaltzeit (typ. 5 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar q Fur Oberflachenmontage geeignet Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und Features q Especially suitable for applications from q q q q 400 nm to 1100 nm (SFH 2540/2545) and of 880 nm (SFH 2540 FA/2545 FA) Short switching time (typ. 5 ns) 5 mm LED plastic package Also available on tape Suitable for surface mounting Applications q Industrial electronics q For control and drive circuits q Photointerrupters Wechsellichtbetrieb Typ Type SFH 2540 SFH 2545 Semiconductor Group Bestellnummer Ordering Code Q Q 1 Typ Type SFH 2540 FA SFH 2545 FA Bestellnummer Ordering Code Q62702-P1795 Q 07.96 SFH 2540/FA SFH 2545/FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Wert Value - 55 ... + 100 230 Einheit Unit C C Top; Tstg TS VR Ptot 50 100 V mW Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Symbol Symbol SFH 2540 SFH 2545 Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 870 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Wert Value SFH 2540 FA SFH 2545 FA Einheit Unit S S S max 100 (> 75) - 850 400 ... 1100 - 70 (> 50) 900 750 ... 1100 nA/Ix A nm nm S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface A LxB LxW H 1 1x1 1 1x1 mm2 mmxmm 3.9 ... 4.4 3.9 ... 4.4 mm Semiconductor Group 2 SFH 2540/FA SFH 2545/FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Symbol Symbol SFH 2540 SFH 2545 Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 870 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit 15 1 ( 5) 0.62 0.89 Wert Value SFH 2540 FA SFH 2545 FA 15 1 ( 5) 0.59 0.86 Grad deg. nA A/W Electrons Photons Einheit Unit IR S VO VO 430 (> 360) - - 390 (> 320) mV mV ISC ISC tr, tf 100 - 5 - 35 5 A A ns C0 TCV 11 - 2.6 11 - 2.6 pF mV/K TCI NEP 0.18 - 2.9 x 10- 14 - 0.1 2.9 x 10- 14 %/K W Hz cm * Hz W D* 3.5 x 1012 3.5 x 1012 Semiconductor Group 3 SFH 2540/FA SFH 2545/FA Relative spectral sensitivity Srel = f () SFH 2540/2545 Relative spectral sensitivity Srel = f () SFH 2540 FA/2545 FA Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 2540/2545 Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage VO= f (Ee) SFH 2540 FA/2545 FA Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Semiconductor Group 4 |
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